Global Low Density SLC NAND Flash Memory Market By Type (8 Gbit, 4 Gbit, and 2 Gbit), By Application (Consumer Electronics, Internet of Things, Automotive, Industrial Application, and Communication Application), By Region, and Key Companies - Industry Segment Outlook, Market Assessment, Competition Scenario, Trends and Forecast 2021-2030 (Includes Business Impact of COVID-19)

                                          
Report updated on 11th September, 2021: Global Low Density SLC NAND Flash Memory Market By Type (8 Gbit, 4 Gbit, and 2 Gbit), By Application (Consumer Electronics, Internet of Things, Automotive, Industrial Application, and Communication Application), By Region, and Key Companies - Industry Segment Outlook, Market Assessment, Competition Scenario, Trends and Forecast 2021-2030 (Includes Business Impact of COVID-19)
Trusted Business Insights has published a comprehensive market research report on, Low Density SLC NAND Flash Memory Market by Product Type (8Gbit, 4Gbit, 2Gbit and others), By Application (Consumer Electronics, Automotive, Industrial Application, Communication Application), and by Region -Global Forecast to 2030, which offers a holistic view of the Global Low Density SLC NAND Flash Memory Market through systematic segmentation that covers every aspect of the target market.

The Global Low Density SLC NAND Flash Memory Market was valued at US$ 1,172.9 Mn in 2020 and is expected to reach US$ 1261.7 Mn by 2030 at a CAGR of 0.7%.

Low-density SLC NAND flash memory is used in commercial, industrial applications and embedded systems that require high performance and long-term reliability such as in ink-jet printers, set-top boxes, digital cameras, TVs, toys, automation control, exercise equipment, POS terminals, teleconferencing equipment, etc. It is Read Only Memory (ROM) for these products, in which it is used for small amounts of data logging and boot up. Low-density SLC NAND flash memory performs the simplest operations among all the types of flash memory. It stores one cell per bit and during reading and writes operations; the firmware doesnt require to go through several levels of data in the cells. SLCs are rated at ten times the endurance, as compared to MLC flash memory. Therefore, currently, SLC NAND flash memory is the only which meets the requirement of all OEM applications with long life cycles, coupled with a high level of endurance, optional wide temperature ranges and high reliability

Embedded products with advanced technology have been growing at a robust rate across the globe as the existing technology is not capable of handling massive data accurately. Therefore, several smart devices manufacturers are now aiming at the installation of SLC NAND flash memory in electronics devices to increase the durability of their products. This is expected to be a major factor to increase demand for low-density SLC NAND Flash Memory market over the forecast period


Global Low Density SLC NAND Flash Memory Market Revenue (US$ Mn), 2021 to 2030


Furthermore, high technological adoption of memory devices in enterprise storage sectors and consumer electronics among other industries in developing countries is another key driver for the Low Density SLC NAND Flash Memory Market growth

However, price of low-density SLC NAND flash memory is higher, as compared to other similar products such as MLC, TLC, etc. which is expected to challenge the growth of the global Low Density SLC NAND Flash Memory market. Nonetheless, increasing adoption of NAND flash technologies in the healthcare sector is creating lucrative opportunities for the target market growth.
Global Low Density SLC NAND Flash Memory Market is segmented on the basis of products, end-use and region. On the basis of products, the market is segmented into 8Gbit, 4Gbit, 2Gbit and others. The 8Gbit segment accounts for the majority share in the global Low Density SLC NAND Flash Memory market, and also it is expected to register the highest growth rate over the forecast period. On the basis of the application, the market is segmented into, consumer electronics, automotive, industrial application, communication application and consumer electronics account for a majority share in the global Low Density SLC NAND Flash Memory market.


Global Low Density SLC NAND Flash Memory Revenue Market Attractiveness Analysis by Type, 2012“2018


On the basis of region, the market is segmented into North America, Europe, Asia Pacific South America and MEA. APAC accounts for the majority share in the global Low Density SLC NAND Flash Memory market followed by Europe owing to high technological adoption of memory devices in enterprise storage sectors and consumer electronics among other industries in developing countries. South America and MEA are expected to register stable growth over the forecast period.

The research report on the Global Low Density SLC NAND Flash Memory Market includes profiles of some of the major companies such as SK Hynix, Inc., Toshiba Corporation, Micron Technology, Inc., Winbond Electronics Corporation, Macronix International Co., Ltd. and GigaDevice Semiconductor (Beijing) Inc.



Below are the active patents related to Low Density SLC NAND Flash Memory Market.


Patent Number: US9627082B2

NAND flash memory device

Abstract

Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

Application filed Date: 2016-03-09

Application Granted: 2017-04-18

Current Assignee: Winbond Electronics Corp

Patent Number: US20130145085A1

Virtual Memory Device (VMD) Application/Driver with Dual-Level Interception for Data-Type Splitting, Meta-Page Grouping, and Diversion of Temp Files to Ramdisks for Enhanced Flash Endurance

Abstract

A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Application filed Date: 2012-12-28

Application Granted: 2015-02-10

Current Assignee: Super Talent Tech Corp

Patent Number: US20090327591A1

Slc-mlc combination flash storage device

Abstract

Flash memory drives and related methods are disclosed that operate to keep frequently written data, which results in frequently erased blocks, in SLC flash, and relatively static data in MLC flash. A flash drive according to the present disclosure keeps track of the number of times that data for each logical block address (LBA) has been written to the flash memory, and determines whether to store newly received data associated with a particular LBA in SLC flash or in MLC flash depending on the number of writes that have occurred for that particular LBA. For each logical block sent to the flash drive, a comparison is made of the write count of the associated LBA to a threshold. If the write count is above the threshold, the logical block is written to SLC flash. If the write count is below the threshold, the logical block is written to MLC flash.

Application filed Date: 2009-06-25

Application Granted: 2014-09-02

Current Assignee: Western Digital Technologies Inc

Key Market Segments

By Type

  
8Gbit
  
4Gbit
  
2Gbit
  
Others

By Application

  
Consumer Electronics
  
Automotive
  
Industrial Application
  
Communication Application And Consumer Electronics
  
Others


Key Market Players included in the report:


  
ATOSolution
  
Cypress
  
GigaDevice Semiconductor (Beijing) Inc
  
Macronix International Co.Ltd.
  
Micron Technology Inc.
  
SK Hynix Inc.
  
Spansion
  
Toshiba Corporation
  
Winbond Electronics Corporation


Below are the key development related to Low Density SLC NAND Flash Memory Market in 2020 and 2021.


May 2021: Macronix was Chosen as Proactive Partner of Renesas R-Car Consortium 2020. Macronix Joins Select Group in Consortium, Providing Expertise in NAND, NOR Flash Memory for ADAS Applications. Macronix International Co., Ltd. (TSE: 2337), a leading integrated device manufacturer in the non-volatile memory (NVM) market, announced it has been selected as a Proactive Partner in Renesas R-Car Consortium 2020. Macronix, which has been a member of the Consortium since the beginning, was chosen as a Proactive Partner based on its leadership in advanced Flash memory solutions for advanced driver assistance systems (ADAS) and connected car solutions -- among the core focuses of the R-Car Consortium. Renesas R-Car Consortium has 255 members, only 70 companies were selected as a Proactive Partner in 2020. Macronix contributes its considerable Flash memory expertise and collaborates with fellow members to advance third- and fourth-generation R-Car designs. Members preferentially receive Renesas R-Car system-on-a-chip (SOC) development boards and end-to-end development support. Their core focus is to leverage R-Car solutions for fast system booting, ADAS, in-vehicle infotainment, and gateways in vehicles. Multiple devices within Macronixs NOR and NAND Flash memory portfolio -- such as the companys OctaBus™ Memory, LybraFlash™ and e.MMC™ NOR Flash solutions -- have been designed into automotive instrument clusters on both Renesas R-Car and RH850 platforms. This development has the potential for future Renesas R-Car solutions to employ octaflash to benefit over-the-air (OTA) update applications in ADAS applications. Source

March 2021: Macronix Provides Advanced Ultra-High-Performance OctaBus Flash Memory to STMicroelectronics Latest STM32 Microcontrollers. 512-Mbit OctaBus Memory Enables Fast Response Time, Easy Software Updates in STs New STM32H72x/73x, STM32L5 and STM32U5 MCU Discovery Kits, Evaluation Boards. Macronix International Co., Ltd. (TSE: 2337), a leading integrated device manufacturer in the non-volatile memory (NVM) market, announced that STMicroelectronics (ST) is using Macronix OctaBus™ flash memory for several STM32 microcontroller (MCU) platforms, including the STM32H72x/73x, STM32L5 and the recently announced STM32U5. Macronixs MX25 OctaBus family is providing the high-performance memory on select STM32 Discovery Kits and Evaluation Boards. Source

October 2020: SK hynix to Acquire Intel NAND Memory Business for $9B. SEOUL, South Korea and SANTA CLARA, Calif., SK hynix and Intel announce that they have signed an agreement on Oct. 20, KST, under which SK hynix would acquire Intel’s NAND memory and storage business for US $9 billion. The transaction includes the NAND SSD business, the NAND component and wafer business, and the Dalian NAND memory manufacturing facility in China. Intel will retain its distinct Intel Optane business. SK hynix and Intel will endeavor to obtain required governmental approvals expected in late 2021. Following receipt of these approvals, SK hynix will acquire from Intel the NAND SSD business (including NAND SSD-associated IP and employees), as well as the Dalian facility, with the first payment of US $7 billion. SK hynix will acquire from Intel the remaining assets, including IP related to the manufacture and design of NAND flash wafers, R&D employees, and the Dalian fab workforce, upon a final closing, expected to occur in March 2025 with the remaining payment of US $2 billion. Per the agreement, Intel will continue to manufacture NAND wafers at the Dalian Memory Manufacturing Facility and retain all IP related to the manufacture and design of NAND flash wafers until the final closing. With this acquisition, SK hynix aims to enhance the competitiveness of its storage solutions, including enterprise SSDs, in the rapidly growing NAND flash space, and further aims to leap forward as one of the leading global semiconductor companies in the industry. SK hynix expects that the transaction would enable SK hynix to grow the memory ecosystem to the benefit of customers, partners, employees and shareholders. Source